Description: Before purchasing, please contact me to double check compatibility. Micron 2x8GB (16GB Total) PC2-5300F-555-12-ZZ (model MT72HTS1G72FZ-667H1D6) Datasheet: https://media.digikey.com/pdf/Data%20Sheets/Micron%20Technology%20Inc%20PDFs/MT72HTS1G72FZ-80E_-667_ds.pdf This memory has been fully tested with MemTest86 and found to be in perfectly working condition. Please see memory report below. It comes from a smoke free and pet free home. You'll receive the exact memory shown so please check the pictures for more information. The memory will be placed in an antistatic bag and safely packaged prior to shipping to protect it during transit. Standard shipping in the USA is free and includes a tracking number. Please check my feedback and bid with confidence Thank you for looking! ------------------------------------------------------- Manufacturing Description Module Manufacturer:Micron Technology Module Part Number:72HTS1G72FZ667H1D6 DRAM Manufacturer:Micron Technology DRAM Components:Not determined DRAM Die Revision / Process Node:H / 50 nm AMB Manufacturer:Trident Microsystems Module Manufacturing Date:Week 26, 2012 Manufacturing Date Decoded:June 25-29, 2012 Module Serial Number:DD9F9208h Module Manufacturing Location:Singapore (SING) Module PCB Revision:1 Physical & Logical Attributes Fundamental Memory Class:DDR2 SDRAM FB-DIMM Module Speed Grade:DDR2-667D Module Capacity:8192 MB Module Thickness (mm):7.0 < x <= 8.0 Module Height (mm):30 < x <= 35 Module Type:FB-DIMM (133.35 mm) Number of DIMM Ranks:4 Number of Column Addresses:11 bits Number of Row Addresses:14 bits Number of Bank Addresses:3 bit (8 banks) DRAM Device Width:4 bit Calculated DRAM Capacity:1 Gb DRAM Density:1 Gb Number of DRAM components:64 DRAM Page Size:1 KB Channel Interface Power Supply:1.5 V DRAM Interface Power Supply:1.8 V DRAM Timing Parameters Fine Timebase Divisor:1 ps Fine Timebase Dividend:5 ps Medium Timebase Dividend:1 ns Medium Timebase Divisor:4 ns Minimum Clock Cycle Time (tCK min):3.00 ns (333.33 MHz) Maximum Clock Cycle Time (tCK max):8.00 ns (125.00 MHz) Minimum CAS# Latency Time (tAA min):15.00 ns Burst Lengths Supported:4, 8 CAS# Latencies Supported (tCL):3T, 4T, 5T Minimum RAS# to CAS# Delay Time (tRCD):15.00 ns Minimum Row Active to Row Active Delay (tRRD):7.50 ns Minimum Row Precharge Delay Time (tRP):15.00 ns Minimum Active to Precharge Delay Time (tRAS):45.00 ns Minimum Act to Act/Refresh Delay Time (tRC):55.00 ns Minimum Refresh Recovery Delay Time (tRFC):127.50 ns Minimum Write Recovery Time (tWR):16.50 ns Write Recovery Times Supported:2T, 3T, 4T, 5T Write Latencies Supported:2T, 3T, 4T, 5T, 6T, 7T, 8T, 9T Additive Latencies Supported:0T, 1T, 2T, 3T, 4T, 5T Minimum Write to Read Command Delay (tWTR):7.50 ns Minimum Read to Precharge Command Delay (tRTP):7.50 ns Average Refresh Interval (tREFI):7.80 ns Rank Read-to-Read additional clocks:0T Write-to-Read additional clocks:0T Read-to-Write additional clocks:1T Terminations Supported (150/75/50Ohm):Yes, Yes, Yes Rank 0 ODT Definition:150 Ohm Rank 1 ODT Definition:150 Ohm Weak Driver:Supported Thermal Parameters DRAM Case Temperature Rise from Ambient DT0: due to Activate-Precharge0.30 °C DT2N/DT2Q: due to Precharge/Quiet Standby1.50 °C DT2P: due to Precharge Power-Down0.150 °C DT3N: due to Active Standby1.65 °C DT4R/DT4R4W: due to Page Open Burst Read4.80 °C DT5B: due to Burst Refresh9.00 °C DT7: due to Bank Interleave Reads with Auto-Precharge10.50 °C AMB Case Temperature Rise from Ambient DT AMB Idle_0: due to AMB in Idle_0 State58.0 °C DT AMB Idle_1: due to AMB in Idle_1 State71.0 °C DT AMB Idle_2: due to AMB in Idle_2 State58.0 °C DT AMB Active_1: due to AMB in Active_1 State95.0 °C DT AMB Active_2: due to AMB in Active_2 State79.0 °C DT AMB L0s: due to AMB in L0s StateNot supported Thermal Resistance Psi[T-A DRAM]: DRAM Package from Top (Case) to Ambient24.5 °C/W Psi[T-A AMB]: AMB Package from Top (Junction) to Ambient21.0 °C/W Maximum Temperatures DRAM Case Temperature Maximum95 °C AMB Junction Temperature Maximum125 °C Thermal Requirements DT4R4W Delta0.40 °C DRAM High Temperature Self-Refresh EntrySupported Double Refresh Rate at DRAM TCaseMax > 85°CRequired SPD Protocol SPD Revision:1.2 SPD Bytes Total:256 SPD Bytes Used:176 SPD Checksum:6865h (OK) CRC covers bytes:0-116 Part number details Classification:DDR2 FB-DIMM Module Type:FB-DIMM Module Speed:DDR2-667 5-5-5 Die Revision:H PCB Revision:1 Package Type:DDP FrequencyCASRCDRPRASRCRFCRRDWRWTRRTP 333 MHz 5551519433633 267 MHz 4441215342522 200 MHz 333911262422
Price: 19.95 USD
Location: Overland Park, Kansas
End Time: 2024-10-12T20:32:06.000Z
Shipping Cost: 0 USD
Product Images
Item Specifics
All returns accepted: ReturnsNotAccepted
Total Capacity: 16 GB
Capacity per Module: 8 GB
MPN: SNPM788DCK2/16G
Memory Features: Fully Buffered
Brand: Micron
Form Factor: FB-DIMM
Type: DDR2 FB-DIMM SDRAM
Number of Modules: 2
Model: MT72HTS1G72FZ-667H1D6
Number of Pins: 240
Bus Speed: PC2-5300 (DDR2-667)
Country/Region of Manufacture: Singapore
Module: 99L0250-001.A00LF
