Electron Transport Phenomena in Semiconductors B M Askerov 1994 World Scientific

Description: Ex-company technical library with usual marks. Never checked out. No dust jacket. Minor shelf handling wear to covers. Other than library markings, little or no signs of use to pages. About the bookThis book contains the first systematic and detailed exposition of the linear theory of the stationary electron transport phenomena in semiconductors. Arbitrary isotropic and anisotropic nonparabolic bands as well as p-Ge-type bands are considered. Phonon drag effect are taken account of in an arbitrary nonquantizing magnetic field. Scattering theory is discussed in detail with account taken of the Bloch wave functions effect. Transport phenomena in the quantizing magnetic field are studied as well as the size effects in thin films. Band structures of the semiconductors and semiconductor compounds of interest are also considered.The main part of the book deals with the three important problems: charge carrier statistics in a semiconductor, classical and quantum theory of the electron transport phenomena. All the theoretical results considered as well as the validity conditions are presented in the form which may be directly used to interpret experimental data.OCR scan:Electron TransportPhenomena inSemiconductorsB M AskerovBaku State UniversityTranslated from the Russianby G. I. PolishukWorld Scientific Singapore . New Jersey . London . Hong KongPublished byWorld Scientific Publishing Co. Pte. Ltd.P O Box 128, Farrer Road, Singapore 9128USA office: Suite 1B, 1060 Main Street, River Edge, NJ 07661UK office: 73 Lynton Mead, Totteridge, London N20 8DH First published in Russian, under the titleElektronnye iavlenia perenosa v połuprovodnikakhby Nauka, 1985 ELECTRON TRANSPORT PHENOMENA IN SEMICONDUCTORS Copyright 1994 by World Scientific Publishing Co.Pte. Ltd.All rights reserved. This book, or parts thereof, may not be reproduced in any form or by any means,electronic or mechanical, including photocopying, recording or any information storage and retrievalsystem now known or to be invented, without written permission from the Publisher. ISBN 981-02-1283-6 For photocopying of material in this volume, please pay a copying fee throughthe Copyright Clearance Center, Inc., 27 Congress Street, Salem, MA 01970, USA. Printed in Singapore by Utopia Press.Foreword Kinetic properties are known to underlie numerous technical applicationsof semiconductors. Besides, these properties are sensitive to the dispersionlaws of the current carriers and the nature of the interaction of the carrierswith various defects of the crystal lattice. Therefore, many conventionalmethods of investigating semiconducting materials are based on the study ofdifferent kinetic effects. They become especially efficient under some extremeconditions: at low temperatures, in strong magnetic fields, in semiconductorswith a highly nonparabolic band, etc. Satisfactory and reliable results areobtained when an integral investigation is carried out and the conclusions ofthe theory of electron transport phenomena are taken into account. How-ever, in the publications that are available only one or two chapters are beingdevoted to the theory of kinetic effects.The present book deals with a systematic and detailed description of thelinear theory of stationary electron transport phenomena in semiconductors.Both the classical and quantum theories of galvano- and thermomagneticphenomena are set forth. Arbitrary isotropic and anisotropic nonparabolicbands as well as bands of the type of hole germanium are described. Theprocess of entrainment of charge carriers by phonons in nonquantizing mag-netic field is taken into consideration. A scattering theory with the influenceof the Bloch amplitude taken into account is presented in detail.Three important chapters constitute the main portion of the book. Theyare the statistics of current carriers in semiconductors, the classical theoryand the quantum theory of electron transport phenomena.The statistics of current carriers when there is no energy spectrum quanti-zation is discussed in the second chapter. The carrier statistics in a quantizingvi Foreword magnetic field and in the case of dimensional quantization is described inchapters 6 and 7 respectivelyChapters 3 to 5 deal with the classical theory of electron transport phe-nomena which is based on the solution of the Boltzmann equation. Theapplicability limits of the Boltzmann equation and its solution are analyzedin detail. The theory of charge carrier scattering in semiconductors with anarbitrary isotropic band is presented. The relaxation time and mobility, tak.ing account of the transitions between bands of light and heavy holes, arecalculated for semiconductors of the type of hole germanium. Chapter 5 pre-sents the transport phenomena in multivalley semiconductors where scatter-ing anisotropy is also accounted for. The results of this chapter can be ap-plied to the electron germanium and silicon as well as to semiconductorcompounds of lead chalcogenide. It is known that the conduction band inlead chalcogenide is not only anisotropic but also nonparabolic.The quantum theory of electron transport phenomena is discussed inchapter 6, where the galvano- and thermomagnetic effects in a transversequantizing magnetic field in semiconductors with an isotropic band are in-vestigated. The conditions of the Shubnikov and de Gaaz oscillations andmagnetophonon resonance are considered. Special attention is given to thethermoelectromotive force in the quantum region of magnetic fields and tothe influence of band nonparabolicity.The last chapter deals with the classical and quantum dimensional effects.The Boltzmann equation, taking account of the boundary conditions for thedistribution function, is solved for films whose thicknesses are comparablewith the mean free path of charge carriers. Some general compact expressionsare obtained for the conductivity tensors in films. The possibility of negativemagnetoresistance in films with an isotropic band is shown in the case ofa completely degenerate electron gas. Dimensional quantization in films isdiscussed in the concluding section where the thermoelectromotive force isconsidered in a strong transverse magnetic field.All transport phenomenon problems considered here are reduced to par-ticular formulae, and for the sake of convenience of application to analysis ofexperimental results conditions are specified for the case when they can beused.The.references to original papers concern mainly theoretical investigationsand the list for each chapter is given at the end of each chapter. These lists donot lay claim to completeness.I consider it my pleasant duty to express sincere acknowledgment to V.L. Foreword vil Bonch-Bruyevich for his valuable remarks and advice while discussing themanuscript which improved its contents in many respects.I am also indebted to B.I. Kuliyev and S.R. Figarova who looked throughthe manuscript, as well as for their participation in the discussions on someaspects of the theory of transport phenomena in films.I wish to express my special gratitude to I.N. Askerova for her greatpatience, tenacity and help during the preparation of the book for itspublication.I am very much obliged to all collaborators of the Department of SolidState Physics of Baku State University and to all those who helped me in mywork on this bookI finally like to express my genuine gratitude to Professor E.R. Caianiellofor the suggestion and to Professor R. Mir-Kasimov for the recommendationto publish my book in English. B.M. Askerov, Baku, 1991.Contents ForewordChapter 1 Energy Spectrum of Charge Carriers in Semiconductors1. Electron motion in ideal crystal lattice2. Energy bands in solids, Brillouin zones3. Energy band edge structure of some semiconductors.The main band models3.1. The simple parabolic band modelChapter 2 Band structure of semiconductors-elementsof the fourth group Al: the multivalleyparabolic modelBand structure of semiconductors A"BV:the nonparabolic Kane model3.4. Semiconductors A"BV1, highly nonparabolicband CD,Hg,-Te and Zn,Hg1-SeBand edge structure of lead chalcogenidesPb Te, PbSe and PbS: the multivalleynonparabolic model Statistics of Charge Carriers in Semiconductors4. Electron concentration in conduction bandand Fermi level, effective mass as function ofconcentration4.1. Distribution function and degeneracycriterion4.2. Spherically symmetric bands4.3. Multivalley bands, ellipsoidal isoenergeticsurfaces, effective state density mass4.4. Effective mass as function of concentrationand energy5. Statistics of charge carriers in intrinsicsemiconductors and semimetals5.1. Intrinsic semiconductors with an energy gapof finite width5.2. Intrinsic semiconductors with zero energygap-gapless semiconductors (GS)Semimetals6. Statistics of charge carriers in extrinsicsemiconductors6.1. General form of the equation of neutrality6.2. Semiconductors with one type of impurity6.3.Compensated semiconductorsGapless semiconductors with impurities Solution of Boltzmann Equation, Scattering Mechanisms7. Phenomenological definition of kinetic coefficientsand their interrelationship7.1. General relations7.2. Longitudinal effects in a longitudinalmagnetic fieldGalvanomagnetic effects7.4. Thermomagnetic effects8. Boltzmann equation and its applicability conditions8.1. Nonequilibrium distribution function8.2. Boltzmann equation8.3. Applicability conditions of the Boltzmannequation9. Solution of Boltzmann equation for arbitraryspherically symmetric band in relaxation timeapproximation9.1. Relaxation time9.2. Solution of the Boltzmann equation in theabsence of magnetic field9.3. Solution of Boltzmann equation with anarbitrary nonquantizing magnetic fieldContents 10. Charge carrier scattering in semiconductors with anarbitrary isotropic band, scattering by impurities10.1. Transition probability10.2. Charge carrier scattering by impurityatoms10.3. Scattering by ionized impurity atoms10.4. Scattering by point defects-long-rangepotential0.5. Scattering by neutral impurity atoms11. Charge carrier scattering by phonons insemiconductors with arbitrary isotropic band11.1. Conduction electrons and phonon gas11.2. Scattering by acoustic phonons, deformationpotential methodScattering by nonpolar optical phonons,deformation potential methodScattering by polar optical phonons11.5. Scattering by piezoacoustic phononsScattering by phonons with screening12. Theory of charge carrier scattering insemiconductors using Bloch wave functions12.1. Generalized formula for relaxation time12.2. Use of the Bloch wave functions within theframework of the Kane model, n-InSb typesemiconductors12.3. Semiconductors of the HgTe type Chapter 4 Electron Transport Phenomena in Semiconductors withIsotropic Band13. General expressions of main kinetic coefficients13.1. Current density and general form ofconductivity tensorsGeneral expressions of main kineticcoefficients13.3. Semiconductors with mixed conductivity14. Transport phenomena in absence of magnetic field14.1. Electric conductivity, drift mobility of chargecarriers14.2. ThermopowerContents Electronic part of thermal conductivityLorentz number19. Conductivity tensors in semiconductors withanisotropic dispersion relation19.1. Conductivity tensors in major ellipsoidaxes19.2. Conductivity tensor in fixed coordinatesystem19.3. Conductivity tensor in moving coordinatesystem20. Main kinetic effects in cubic semiconductors withanisotropic dispersion relation20.1. In absence of magnetic field20.2. In weak transverse magnetic fields20.3. Weak longitudinal magnetic fields20.4. Strong magnetic fields Chapter 6 Transport Phenomena in Quantizing Magnetic Fields21. Energy spectrum and charge carrier statistics inquantizing magnetic fields21.1. Conduction electron energy in magneticfieldSpin splitting, effective g *- factor21.3. State density in magnetic fieldChemical potential and electron gasdegeneracy criterionMagnetic carrier freezing-out21.6. Semimetal-semiconductor transition22. Galvanomagnetic phenomena in quantizingmagnetic field22.1. Electric conductivity tensor in transversequantizing magnetic field22.2. Charge carrier scattering in quantizingmagnetic field22.3. Transverse magnetoresistance in quantumlimitShubnikov-de Haas oscillations22.5. Magnetophonon oscillations23. Thermomagnetic phenomena in transverse 14.3. 15. Transport phenomena in magnetic field15.1. Hall effect15.2. Magnetic resistance, variation of resistance ina magnetic fieldTransverse Nerst-Ettingshausen effectVariation of thermopower in transversemagnetic fieldMadji-Righi-Leduc effect, change of theelectron part of thermal conductivity in atransverse magnetic fieldThe Righi-Leduc effectEttingshausen effectMixed scattering mechanismDegenerate semiconductors in arbitrarymagnetic field15.10. Transport phenomena in scattering byoptical phonons16. Transport phenomena in semiconductors ofp-Ge type16.1. System of Boltzmann equations for heavyand light holesCalculation of hole relaxation time withaccounting for interband transitions16.3. Conductivity and other kinetic coefficients17. Charge carrier entrainment by phonons insemiconductors with arbitrary isotropic band17.1. Boltzmann equation solution with accountingfor phonon nonequilibrium17.2. Calculation of kinetic coefficients associatedwith entrainment effect Transport Phenomena in Semiconductors withAnisotropic Nonparabolic Band, Anisotropic Scattering18. Boltzmann equation solution for anisotropic band23.3. 24.2. 25.2. Charge carrier concentration and Fermi levelSemimetal size-dependent quantized films 26.5 23.2. Nondiagonal thermomagnetic tensorcomponents in transverse quantizingmagnetic fieldNernst-Ettingshausen effect in quantum limit23.4. Thermopower in transverse quantizingmagnetic field Electron Transport Phenomena in SemiconductiveFilms. Size-dependent Effects24. Boltzmann equation solution for films with takingaccount of boundary conditions24.1. Boltzmann equation and boundaryconditionsSolution of Boltzmann equation for filmswith arbitrary isotropic band24.3. General form of conductivity tensors in films25. Transport phenomena in films with arbitrarydispersion relation25.1. Thick films ( » 1) in arbitrary magneticfield or films of almost arbitrary thickness(6 1) in strong magnetic field (v » 1)Thin films in weak magnetic field25.3. Negative magnetoresistance in films. Quantum size effects26.1. Energy spectrum and state density26.2.26.3.26.4. Conditions for realizing quantum size-dependent effectThermopower of quantized film in strongmagnetic field

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