Cane Creek

60W RF PA Nitride(GaN) High Electron Mobility Transistor(HEMT)+High Efficiency

Description: DescriptionInnotion’s YP10401560T is a 60-watt, unmatched gallium nitride (GaN) high electron mobility transistor (HEMT) designed specifically with high efficiency, high gain and wide bandwidth capabilities with frequency up to 4000MHz. The transistor is supplied in a ceramic /metal flange package Features■ High Efficiency and Linear Gain Operation■ Negative Gate Voltage and Bias Sequencing Required■ Excellent Thermal Stability and Excellent Ruggedness■ Metal Based Package Sealed with Ceramic-Epoxy Lid■ Gold Metallization System: Chip-Wire Bond-PackagePAY ATTENTION1: Standard express has a certain risk of getting lost. For products with higher value, we recommend to choose fast commercial express, we will also provide very favorable price, please contact us for specific express price. 2: We do not guarantee delivery time on all international shipments due to differences in customs clearing times in special countries. Please note that buyers are responsible for all additional custom fees, duties, and taxes for importation into your country. We will not refund shipping charges for reused shipments. 3: Because some countries have strict regulations on the import of such products, such as Brazil, Russia, Germany, etc., please make sure whether individual could import the product in your country, or if you have the qualification to import the product. The buyers are responsible for the lost if the goods are detained by the customs. Shopping1. Please make sure whether item(s) you want to order is/are the right one(s) you need and we do advise that customer friends pre-contact us about relevant issue if you are not sure, to avoid possible extra waste caused by inappropriate choice. 2. Import duties, taxes and charges are not included in item price or shipping charges and Customs clearance are buyer’s responsibility. Please check with your local Customs authorities before purchase. Payment 1. We accept direct order payment on eBay itself. 2. Bulk orders can be accepted. Products are always full in stock, or can be customized for specific requirement after communication

Price: 199.29 USD

Location: suzhou

End Time: 2023-12-07T10:00:06.000Z

Shipping Cost: 0 USD

Product Images

60W RF PA Nitride(GaN) High Electron Mobility Transistor(HEMT)+High Efficiency

Item Specifics

Return shipping will be paid by: Buyer

All returns accepted: Returns Accepted

Item must be returned within: 30 Days

Refund will be given as: Money back or replacement (buyer's choice)

Brand: SZHUASHI

Type: Power Amplifier

Manufacturer Warranty: 1 Year

Number of Inputs: 1

Color: Yellow

Model: Power Amplifier

Year Manufactured: 2023

Country/Region of Manufacture: China

Power: 60 W

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